Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide
Identifieur interne : 002F16 ( Main/Repository ); précédent : 002F15; suivant : 002F17Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide
Auteurs : RBID : Pascal:11-0433249Descripteurs français
- Pascal (Inist)
- Cellule solaire, Structure cellulaire, Imide polymère, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Structure lamellaire, Structure cristalline, Propriété optique, Photoluminescence, Dépendance température, Bande interdite, Propriété électronique, Structure bande, Cuivre, Gallium, Oxyde de zinc, Sulfure de cadmium, Molybdène, Sodium, Dispositif photovoltaïque, Substrat imide polymère, ZnO, CdS, Na, 8460J, 7866, 7855, 7320.
- Wicri :
English descriptors
- KwdEn :
- Band structure, Cadmium sulfide, Cell structure, Copper, Copper selenides, Crystalline structure, Electronic properties, Energy gap, Gallium, Gallium selenides, Indium selenides, Lamellar structure, Molybdenum, Optical properties, Photoluminescence, Photovoltaic cell, Polyimide, Sodium, Solar cell, Temperature dependence, Zinc oxide.
Abstract
Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se2/Mo/polyimide were examined using a range of techniques. The elemental composition of the Cu(InGa)Se2 (CIGS) layers, their crystalline structure and optical properties were studied. Photoluminescence (PL) spectra of the CIGS absorber layers were studied as functions of temperature (4.2-240 K) and excitation power density. The band gap energy Eg of the CIGS layers was determined by employing photoluminescence excitation (PLE) spectroscopy. The influence of sodium incorporation on the PL properties of CIGS was analysed. Correlations of the optical properties of the CIGS absorber layers and the photovoltaic parameters of the solar cells were revealed.
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Puttnins</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Solarion AG</s1><s2>04288, Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Yakushev, M V" uniqKey="Yakushev M">M. V. Yakushev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, SUPA, Strathclyde University</s1><s2>G4 ONG Glasgow</s2><s3>GBR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>G4 ONG Glasgow</wicri:noRegion></affiliation></author><author><name sortKey="Luckert, F" uniqKey="Luckert F">F. Luckert</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, SUPA, Strathclyde University</s1><s2>G4 ONG Glasgow</s2><s3>GBR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>G4 ONG Glasgow</wicri:noRegion></affiliation></author><author><name sortKey="Martin, R W" uniqKey="Martin R">R. W. Martin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, SUPA, Strathclyde University</s1><s2>G4 ONG Glasgow</s2><s3>GBR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>G4 ONG Glasgow</wicri:noRegion></affiliation></author><author><name sortKey="Karotki, A V" uniqKey="Karotki A">A. V. Karotki</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P.Brovki 19</s1><s2>220072 Minsk</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220072 Minsk</wicri:noRegion></affiliation></author><author><name sortKey="Gremenok, V F" uniqKey="Gremenok V">V. F. Gremenok</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P.Brovki 19</s1><s2>220072 Minsk</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220072 Minsk</wicri:noRegion></affiliation></author><author><name sortKey="Mudryi, A V" uniqKey="Mudryi A">A. V. Mudryi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P.Brovki 19</s1><s2>220072 Minsk</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Biélorussie</country><wicri:noRegion>220072 Minsk</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0433249</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0433249 INIST</idno><idno type="RBID">Pascal:11-0433249</idno><idno type="wicri:Area/Main/Corpus">002822</idno><idno type="wicri:Area/Main/Repository">002F16</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Cadmium sulfide</term><term>Cell structure</term><term>Copper</term><term>Copper selenides</term><term>Crystalline structure</term><term>Electronic properties</term><term>Energy gap</term><term>Gallium</term><term>Gallium selenides</term><term>Indium selenides</term><term>Lamellar structure</term><term>Molybdenum</term><term>Optical properties</term><term>Photoluminescence</term><term>Photovoltaic cell</term><term>Polyimide</term><term>Sodium</term><term>Solar cell</term><term>Temperature dependence</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Structure cellulaire</term><term>Imide polymère</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Structure lamellaire</term><term>Structure cristalline</term><term>Propriété optique</term><term>Photoluminescence</term><term>Dépendance température</term><term>Bande interdite</term><term>Propriété électronique</term><term>Structure bande</term><term>Cuivre</term><term>Gallium</term><term>Oxyde de zinc</term><term>Sulfure de cadmium</term><term>Molybdène</term><term>Sodium</term><term>Dispositif photovoltaïque</term><term>Substrat imide polymère</term><term>ZnO</term><term>CdS</term><term>Na</term><term>8460J</term><term>7866</term><term>7855</term><term>7320</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Molybdène</term><term>Sodium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se<sub>2</sub>/Mo/polyimide were examined using a range of techniques. The elemental composition of the Cu(InGa)Se<sub>2</sub> (CIGS) layers, their crystalline structure and optical properties were studied. Photoluminescence (PL) spectra of the CIGS absorber layers were studied as functions of temperature (4.2-240 K) and excitation power density. The band gap energy Eg of the CIGS layers was determined by employing photoluminescence excitation (PLE) spectroscopy. The influence of sodium incorporation on the PL properties of CIGS was analysed. Correlations of the optical properties of the CIGS absorber layers and the photovoltaic parameters of the solar cells were revealed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>519</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication and characterisation of Cu(In,Ga)Se<sub>2</sub> solar cells on polyimide</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials Strasbourg, France</s1></fA09><fA11 i1="01" i2="1"><s1>ZACHMANN (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>PUTTNINS (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>YAKUSHEV (M. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>LUCKERT (F.)</s1></fA11><fA11 i1="05" i2="1"><s1>MARTIN (R. W.)</s1></fA11><fA11 i1="06" i2="1"><s1>KAROTKI (A. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>GREMENOK (V. F.)</s1></fA11><fA11 i1="08" i2="1"><s1>MUDRYI (A. V.)</s1></fA11><fA12 i1="01" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>GUILLEMOLES (Jean François)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>YAMADA (Akira)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>ABOU-RAS (Daniel)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Solarion AG</s1><s2>04288, Leipzig</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, SUPA, Strathclyde University</s1><s2>G4 ONG Glasgow</s2><s3>GBR</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Scientific-Practical Material Research Centre of the National Academy of Science of Belarus, P.Brovki 19</s1><s2>220072 Minsk</s2><s3>BLR</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>the European Materials Research Society (E-MRS</s1><s3>EUR</s3><s9>org-cong.</s9></fA18><fA20><s1>7264-7267</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000509101330320</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0433249</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se<sub>2</sub>/Mo/polyimide were examined using a range of techniques. The elemental composition of the Cu(InGa)Se<sub>2</sub> (CIGS) layers, their crystalline structure and optical properties were studied. Photoluminescence (PL) spectra of the CIGS absorber layers were studied as functions of temperature (4.2-240 K) and excitation power density. The band gap energy Eg of the CIGS layers was determined by employing photoluminescence excitation (PLE) spectroscopy. The influence of sodium incorporation on the PL properties of CIGS was analysed. Correlations of the optical properties of the CIGS absorber layers and the photovoltaic parameters of the solar cells were revealed.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C20A</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Structure cellulaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Cell structure</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Estructura celular</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Imide polymère</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Polyimide</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Imida 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